Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using R-D framework

Five signatures of NBTI such as strong gate insulator process dependence, universal rate of long-time DC degradation, AC duty cycle dependence, AC frequency independence as well as recovery of degradation after stress have been identified. A model has been proposed using uncorrelated contributions from stress induced generated interface traps, hole trapping in process related pre-existing traps and stress induced generated bulk traps to explain the above features. For optimized devices, NBTI under use condition is shown to be dominated by interface traps, and can be modeled using Reaction-Diffusion model.