DC/AC characteristic fluctuations induced by interface traps and random dopants of high-κ / metal-gate devices

We study effects of interface traps (ITs) and random dopants (RDs) on 16-nm high-κ/metal gate MOSFETs. Totally random generated devices with 2D ITs at the HfO
₂
/silicon oxide interface as well as 3D RDs inside the channel are simulated. Fluctuations of threshold voltage, on/off state current and gate capacitance of the tested devices are estimated and discussed. The results indicate the aforementioned fluctuations resulting from ITs and RDs are significant; and RD fluctuation is larger than that of ITs.