The performance improvement of OTFT by the planar bottom-contact structure with Bi-layer gate dielectric

This study reports the performance improvement of a pentacene-based OTFT (organic thin-film transistor) with a planar bottom-contact structure, and investigates the influence of surface roughness of source/drain electrodes with planar structure on electrical characteristics. Because the contact resistance between the organic semiconductor and the source/drain is significantly decreased, the mobility of OTFT with planar structure is higher than that of conventional bottom-contact structure. And the rougher surface of electrodes can get the higher contact resistance to result in the inferior performance of OTFT.