Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications

Power electronic system performance enhancements, device structures, process technologies, manufacturability, and performance results obtained from three distinct process technologies that are based on selective TiSi/sub 2/ and low-pressure chemical vapor deposition (LPCVD) tungsten, and blanket LPCVD WSi/sub 2/ are discussed. Several key factors are identified that should be helpful in the choice and implementation of refractory metallization targeted for a specific system enhancement. It is demonstrated that the application of advanced wafer fabrication technologies using refractory multilevel metallizations has resulted in nearly optimal performance from low-voltage silicon power devices. Tables are shown which summarize the current state of the art of refractory metallization as applied to power system applications. It is seen that TiSi/sub 2/-based technology has the highest potential for near-term commercialization, followed by LPCVD WSi/sub 2/.<
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