Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs

The hysteresis effect on the output characteristics, which originates from the floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25
$^{\circ}\hbox{C}$
and 125
$^{ \circ}\hbox{C}$
. For a better understanding of the hysteresis characteristics, the authors developed
$I_{D} \ hysteresis$
which is defined as the difference between
$I_{D}$
versus
$V_{D}$
forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in
$I_{D} \ hysteresis$
. The experimental results show that
$I_{D} \ hysteresis$
declined as the operating temperature increases. Based on the measurement, we have demonstrated the temperature dependence of hysteresis effect in PD SOI MOSFETs.