Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi2 for high performance metal source/drain MOSFETs

This paper reports junction position control and the Schottky barrier height (Φ
_Bn
) tuning in ultrathin SOI MOSFETs with epitaxial NiSi
₂
source/drain (S/D). We demonstrate the junction position control in the lateral direction with preserving the (111) facet in 8-nm-thick SOI using epitaxial NiSi
₂
growth. Φ
_Bn
at epitaxial NiSi
₂
can be easily controlled by P
⁺
implanted dose using dopant segregation technique, and the saturation drain current (I
_DSat.
) increases due to lowering Φ
_Bn
. Thus, epitaxial NiSi
₂
is a promising metal S/D for future MOSFETs.