Crystal growth of BaTiO/sub 3/ by the TSSG method and its thermal poling

BaTiO/sub 3/ single crystals were grown by using the TSSG technique. The seeding process was the most important point in the growth. The dielectric constant was resonant at the cubic-tetragonal transition at T/sub c/=131/spl deg/C. A thermal poling process was developed in this work. Samples with two parallel or one polished surfaces (/spl plusmn/c) were heated to 1100/spl deg/C, held for 3 hours and then cooled to room temperature. After the thermal poling, an electrical field of about 1 kV/cm was applied along the c direction at a temperature near Tc for 10 hours in order to obtain single-domain BaTiO/sub 3/ crystals.