ALD Al2O3 activated direct wafer bonding for III–V CMOS photonics platform

Atomic layer deposited Al₂O₃ activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m² without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/mm.