Characterization and modelling of gate current injection in embedded non-volatile flash memory

Hot Carrier Injection (HCI) is investigated from the experimental and modelling perspectives. Extensive characterization of HCI is performed on flash devices to overcome the difficulties arising from direct gate injection measurements. Furthermore, a semi-analytical approach has been developped, capable of modelling both flash cell's electrostatics during transient operation and gate current under HCI by a non-local model valid for long and short channel devices.