Admittance characterization and interface trap property extraction for Ge/III-V MOS structures

MOS admittance characteristics, essential for extracting crucial parameters of MOS devices, can be heavily distorted because of Ge/III-V properties such as poor interface passivation and bandgap. These distortions can result in far-reaching misinterpretations and large errors in extracted parameters. The differing admittance characteristics and related adapted interface trap extraction methods are elaborated for Ge/III-V MOS.