High efficiency planar oscillator with RF power of 100 mW near 140 GHz

An integrated planar oscillator on a high resistivity silicon substrate generates an RF-power of 100 mW in D-band with a peak efficiency of 4.5%. The single sideband S/N ratio of the oscillator is -75 dBc/Hz@100 kHz off carrier. The investigated disc resonator with capacitive coupling to a microstrip line is manufactured by application of micromachining techniques.