Design and fabrication of low-threshold 1.55-/spl mu/m graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes

This paper presents a guideline for designing an optimum low-threshold 1.55-/spl mu/m graded-index (GRIN) separate confinement-heterostructure (SCH) strained InGaAsP single quantum-well (SQW) laser diode (LD). The guideline was formulated based on the results of numerical and experimental analysis. After calculating the sheet carrier density at the lasing threshold, the guideline was obtained by considering the tradeoff between carrier and optical confinements in the well: the GRIN layer energy gap should be varied parabolically from InP to InGaAsP having a band gap wavelength of 1.1 /spl mu/m to inject a large number of carriers into the well, and the thickness of one side of the GRIN layer should be more than 300 nm to keep a strong optical confinement. The GRIN SQW LD designed using the guideline has a J/sub th/ as low as 98 A/cm/sup 2/ at a cavity length of 5 mm, which proves the guideline is effective for designing low-threshold 1.55-/spl mu/m GRIN SQW LDs.