Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode

In this work, (1) we propose a new, simpler, and fully CMOS-compatible TiN\HfO
₂
\TiN material stack, using PEALD TiN which after plasma optimization results in functional cells down to 2275nm
²
(35nm×65nm), (2) we demonstrate stable switching between resistances >;10
⁵
Ω using a low program current of ~1μA, where the 10
⁵
Ω-resistive LRS state shows good retention at high temperature, projected to 10 years stability at 80°C.