Multigigabit/s 1.5 mu m lambda /4-shifted DFB OEIC transmitter and its use in transmission experiments

Optoelectronic integrated circuit (OEIC) transmitters consisting of 1.5 mu m lambda /4-shifted distributed feedback (DFB) lasers and InGaAs-InAlAs MODFETs were fabricated for the first time. The entire processing requires only two organometallic vapor-phase epitaxy (OMVPE) growths, with the potential for high yield and low cost. Direct modulation of the OEIC transmitter is demonstrated for bit rates up to 10 Gb/s. A transmission experiment using the OEIC transmitter and a hybrid p-i-n/HEMT receiver is conducted at 5 Gb/s, with a sensitivity of -20 dBm and a bit-rate-distance product of 145 Gb/s-km.<
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