Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial $\hbox{NiSi}_{2 - y}$

The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi
_2-y
film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi
_2-y
formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800°C allow the epitaxial NiSi
_2-y
film to take full advantage of the DS process. For drive-in annealing below 750°C , the effective SBH is altered to ~ 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi
_2-y
film.