Error correction for finite semiconductor resistivity in Kelvin test structures

The Cross Bridge Kelvin Resistor structure is a commonly used test structure for the extraction of the specific contact resistance of ohmic contacts. Analyses using this structure are generally based on a two-dimensional model which assumes zero voltage drop in the semiconductor layer (in the direction normal to the plane of the contact). This paper uses a three-dimensional analysis to show the magnitude of the errors introduced by this assumption, and illustrates the conditions under which a three-dimensional analysis should be used.