New method for the parameter extraction in Si MOSFETs after hot carrier injection

A new parameter extraction method is proposed for the monitoring of hot carrier injection (HCI) degradation in Si MOSFET's allowing details of the contributions of the channel and access source-drain extension regions to be obtained. Thanks to this method, MDD and LATID architectures have been successfully compared. It is found that MDD devices suffer more from channel degradation, whereas for the LATID devices, the access SD resistance constitutes the worst case parameter.