Flicker noise characterization of polysilicon resistors in submicron BiCMOS technologies

Low frequency noise characterization of various polysilicon film resistors from two industrial BiCMOS 0.7 /spl mu/m and BiCMOS 0.5 /spl mu/m technologies, is performed on a test structure initially designed for resistor matching characterization, including a wide range of resistor area. After presentation of noise test bench results and related modeling, flicker noise properties are discussed for different polysilicon film thicknesses and doping levels. In conclusion, polysilicon resistance flicker noise depends strongly on these parameters.