On wafer noise measurement using bipolar transistor RF test structures

We present here a technique for on wafer noise measurements using bipolar R.F. cell structures. Measurements were taken using both single and multiple device placements on a variety of technologies. At mid band, identification of individual noise sources within the device allows us to extract a base spreading resistance parameter. This noise extracted value for rb is compared to data from 'S' parameter measurement and our noise measurements are tested against simulated mid-band noise profiles.