3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

We present our most recent developments in 4H-SiC DMOSFETs. A 4H-SiC DMOSFET with an active area of 0.1 cm
²
showed a specific on-resistance of 3.7 mΩ-cm
²
with a gate bias of 20 V, and an avalanche voltage of 1500 V with gate shorted to source at 25°C. A threshold voltage of 3.5 V was extracted from the DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.5 cm
²
, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25°C.