Control of turn-on voltage in GaN Schottky barrier diode using Zr/Al/Mo/Au metal stack

A GaN Schottky diode using Zr/Al/Mo/Au metal stack for Schottky contact has been newly developed. Turn-on (V
_on
) and breakdown voltages (V
_br
) are controllable with varying the annealing temperature. The fabricated diode shows the values V
_on
, series resistance (R
_s
), capacitance (C
₀
), and V
_br
to be 0.42 V, 4.2 Ω, 1.0 pF, and 24 V, respectively. These values indicate that 85% conversion efficiency is expected at 5.8 GHz in the rectenna circuit.