Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure was also realized and strong photoluminescence spectra at 1200nm were observed at 80K.