Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM

STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and outline STT-RAM's future prospects, applications and roadmap.