Post Si CMOS graphene nanoelectronics

IBM graphene FETs (GFET) yield the highest cut-off frequency (f
_T
) values reported: >;200 GHz on epitaxially grown SiC wafer and >;150 GHz
¹
on CVD-grown-transferred onto Si wafer which are well above Si MOSFET f
_T
-L
_g
trend in ITRS
²
. A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the properties that are unique to graphene including angular dependent carrier reflection which can dynamically change the device operation, leading to reconfigurable multi-functional logic.