Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates

We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 /spl Aring/-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 /spl mu/m and has a low threshold pump power of 4.2 KW/cm/sup 2/.