MBE growth of wide-gap II-VI laser materials-real-time in-situ monitoring of critical material properties

Summary form only given. Techniques will be described involving electron and laser beam probes which can be applied to the real-time in-situ-monitoring of carrier concentrations in doped epilayers and defect formation due to lattice-mismatch during the MBE growth of wide-gap II-VI/GaAs heterostructures. Such properties are critical to the performance of wide-gap II-VI/GaAs light-emitting devices.