Molecular dynamics simulation of low energy boron and arsenic implant into silicon

We have studied the implantation of boron and arsenic ions into silicon by classical Molecular Dynamics simulation. Single ion implant into the dimer reconstructed Si{100}(2/spl times/1) surface has been examined at energies between 0.25 keV and 5.0 keV, at both normal incidence and at non-channeling incidence. By using a new model for electronic stopping, developed for semiconductors and containing only one fitted parameter, we have been able to accurately calculate the depth profile of the implanted B and As atoms. The results of the calculations are compared to the predictions from a Binary Collision (BC) model for the dopant profile, and to experimental data. This allows us to examine the low energy limits on the validity of the BC approximation with the aim of producing modifications to the BC model to extend its validity into the sub-keV regime.