The Ibis 1000 SIMOX production implanter

The second generation of the Ibis 1000 production implanter has been used in the manufacture of SIMOX wafers since June 1995. High quality 150 and 200 mm SIMOX wafers are being produced with excellent implant uniformity and repeatability. The system includes a newly designed ion source, analyzer, beam scan system, and vacuum loadlock robotic wafer handler. Wafer temperature is maintained through a servo-controlled heat lamp array during implantation. The beam is scanned at a rate of 150 Hz across a circular array of wafers held by pedestals in a hub and spoke arrangement rotating at 105 rpm. The ion beam is only allowed to impinge on silicon in the regions upstream and downstream of the implant plane to prevent metallic contamination and particulate generation. The wafer holders individually rotate to set implant angle and to facilitate horizontal handling by an in-vacuum robot. In this paper we describe the essential features of the Ibis 1000 implanter along with its performance characteristics and discuss the quality of material produced using this system.