Influence of the mechanical conditions on the electrical and structural properties of the interface between directly bonded silicon wafers

We have studied the influence of the flatness and the relative misorientation of two contacting wafers on the Spreading Resistance profiles obtained in the interfacial region after direct bonding. Both parameters are shown to have a significant influence on the electrical properties of the structure. Plan-view Transmission Electron Microscopy examination of the interfaces suggests that this influence may take its origin from dislocation-related electrically active defects.