A test structure for plasma process charging monitor in advanced CMOS technologies

In this report, a new plasma damage monitor for advanced CMOS technology with TOX <7 nm is introduced. The proposed damage monitor is very simple, most sensitive to plasma charging, and most of all, correlates to real circuit performance and reliability. The monitor is based on an unconventional antenna structure (a transistor with an isolated gate pad) combined with realistic antenna ratio and the gate oxide leakage measurement only. No other device parameters (Vt, Gm, Idsat, interface states, or QBD) measurements are required. No other antenna design is required. The plasma damage monitor can also be used for future ULSI CMOS manufacturing.