Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon

We have developed an anisotropic-chemical-etching process simulation system, MICRO-CAD, which is equipped with a database of orientation dependent etching rates of single crystal silicon. When crystallographic orientation of the wafer, mask pattern, etching media and etching conditions such as its concentration and temperature are given, it calculates 3D etching profiles according to the etching time increments.