Comments, with reply, on 'Random telegraph noise of deep-submicrometer MOSFETs' by K.K. Hung et al

For original paper see ibid., vol.11, no.2, p.190 (1990). The commenter discusses several points in the above-titled correspondence that appear questionable. One of these points concerns the assertion according to which such that N/ such that N/sub t/ approximately=-1 when N>10/sup 11//cm/sup 2/. It is pointed out that this is true for non-VLSI types of devices, but it is not acceptable for ULSI devices with 86-AA-thick gate oxide and 5*10/sup 17//cm/sup 3/ channel coping. A second point of criticism concerns the necessity of taking into account the mobility fluctuations induced by that of the trapped carrier number. It is suggested that before embodying this effect, it would be better to account for the gate voltage dependence of the effective mobility in strong inversion due to the vertical electric field. Such a treatment is outlined. The authors show, in the first case, that the error caused by the approximation is negligible and, in the second case, that they have taken into account the gate voltage dependence of the effective mobility in the analysis of the random telegraph noise data, although not explicitly.<
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