Using X-parameters to model RFID energy harvesting circuits

In this paper a new behavioral model that describes energy harvester circuits for use in RFID systems will be presented. The use of X parameters, recently proposed for Power Amplifier characterization, will be expanded to RFID circuits. It is expected that this type of model is able to improve the design and optimization of energy harvester circuits, and give a step forward in terms of RFID simulation. Poly-Harmonic Distortion (PHD) and X-parameters models will be presented as a first glance and afterward the theoretical considerations for applying X parameters to RF-DC converters and corresponding simulations will be given.