A 512 bits Phase Change Memory embedded IP based on 0.18-µm CMOS process

A 512 bits Phase Change Memory (PCM) embedded IP has been successfully achieved based on 0.18-μm CMOS process. The material of PCM is Ge
₂
Sb
₂
Te
₅
. And the cell structure of PCM is 1R1T which can be compatible with CMOS process. The size of heat electrode is 90 nm, while the standard electrode is 260 nm, which can reduce the reset current. The full chip periphery circuit including read/write drive, decoder and PCM array is designed to realize the load/store function and enhance the performance. According to our test results, the Reset/Set parameters are: Reset/3 mA/60 ns and Set/0.6 mA/400 ns/. The yield of our test chip is up to 96.7%, while the endurance is up to 10
⁷
. The data retention of PCM cell can be extrapolated to 10 years data retention time at 80°C.