Statistical comparison of random telegraph noise (RTN) in bulk and fully depleted SOI MOSFETs

Random telegraph noise (RTN) in bulk and fully depleted (FD) SOI MOSFETs are measured by device matrix array (DMA) TEG for statistical analysis. It is found that, in the tail part of the distribution, threshold voltage change by RTN (ΔV
_th
) in FD SOI MOSFETs is smaller than that in Bulk MOSFETs. 3D device simulation confirms that ΔV
_th
becomes very large in bulk MOSFETs when a trap happens to be in the valley of channel potential caused by random dopant fluctuation (RDF), while the possibility of large ΔV
_th
is small in FD SOI MOSFETs because the channel potential profile is smooth due to low impurity density.