GaN Schottky Barrier Photodetectors With a Lattice-Matched ${\rm Al}_{0.82}{\rm In}_{0.18}{\rm N}$ Intermediate Layer

GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with a low-temperature Al
_0.82
In
_0.18
N intermediate layer were fabricated and characterized. With the intermediate layer, it was found that we could reduce the reverse leakage current by more than three orders of magnitude and achieve a 45 times larger UV-to-visible rejection ratio. Compared with the conventional GaN PDs, it was found that we could also reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer.