High-Performance Drain-Offset a-IGZO Thin-Film Transistors

We report the effect of the drain-offset length on the performance of amorphous-indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from
$\sim$
40 to 10
$\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$
by increasing the drain-offset length from 0 to 5
$\mu\hbox{m}$
, the threshold voltage
$(V_{\rm th})$
and swing
$(S)$
remain relatively independent of the offset length variation. Because of its high mobility even for large (5
$\mu\hbox{m}$
) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays.