Sn doped GaAs by CBE using tetramethyltin

Growth and characterization of tin doped GaAs(100) layers using chemical beam epitaxy are described in this work. The resistivity, type of carriers, as well as their net concentrations and mobilities were obtained by Hall Effect measurements. Layers with electron concentrations between 7.0×10
¹⁶
and 1.6×10
¹⁹
cm
³
were obtained, while the measured room temperature mobilities were in the range 860-2700 cm
²
/Vs. Photoluminescence spectra show the presence of a donor related transition, whose intensity increases with the sample doping. Acceptor related transitions, different than the residual carbon doping, were not observed, suggesting that Sn incorporates as a donor with a small compensation ratio.