BSIM4 characterization of current enhancement in short channel s-Si/SiGe NMOS

This paper investigates the various effects that affect the I
_D
-V
_DS
characteristics in a strained-Si over SiGe NMOSFETs. The modeling is done keeping the BSIM4 parameters as the reference. The model thus developed showed precise agreement with the experimental data. It is observed that mobility in strained silicon increases and thereby enhancing current. Bandgap is affected to a lesser extent, but considerably affects the transfer characteristics. The improved model can serve to aid the development of BSIM MOSFET model by incorporating the discussed parameters for strained-Si over SiGe nMOSFETs.