Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

Highly activated n-type dopant is essential for n
⁺
/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFETs as geometry scaling proceeds. Rapid thermal annealing of coimplanted P and Sb in Ge has provided n-type dopant activation beyond 1 × 10
²⁰
cm
^-3
. However, there are limited reports on the electrical characteristics of these junctions. This letter has investigated the temperature-dependent diode I-V characteristics and contact resistance of metal-n
⁺
Ge contacts. Well-behaved n
⁺
/p Ge diodes (I
_on
/I
_off
>; 10
⁵
and η <; 1.2) and significantly reduced contact resistance (ρ
_c
~ 8 × 10
^-7
Ω · cm
²
) have been demonstrated.