InGaN nanowires on silicon: Material characteristics and device applications

In this paper we have grown catalyst-free In(Ga)N nanowires and dot-in-nanowire heterostructures on (001) and (111) silicon substrates by plasma-assisted MBE. The nanowires grow in the wurtzite structure with c-axis in the direction of growth. HRTEM data indicate that the nanowires and dot-in-nanowires are defect free. The diameter of the nanowires can be varied from 50-100nm by varying the growth conditions. Photoluminescence spectra is measured at room temperature. The Auger recombination coefficient in these defect-free In(Ga)N nanowires and InGaN/GaN dot-in-nanowires are measured by excitation dependent and time-resolved PL measurements.