Electrically driven single photon sources based on single quantum dot RCLEDs

Electrically driven single photon sources based on single quantum dot RCLED are reported. The device consists of a GaAs layer with low density of InAs QDs, a 60 nm-thick AlGaAs aperture layer with high aluminum content, p and n type GaAs electrical contact layers. The aperture is used to confine the electric current in order to address a single QD.