GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology

High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance
g
_m
of 600 mS/mm and an extrapolated cutoff frequency
f
_T
of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz