Integrated W-band RECTENNA (rectifying antenna) with Ge quantum dot Schottky Diode

In this paper we will present our latest research results of the integrated RECTENNA (the rectifying antenna) with a THz quantum dot Schottky Diode and an integrated silicon antenna for RF applications. Within this work a specific antenna design, an integrated single patch antenna, will be shown. A layer of Ge quantum dot (QD) was embedded in an integrated Si Schottky barrier diode. The high frequency limit 1.1THz was calculated from S-parameter measurements up to 110GHz. Both are integrated on HR-Si substrates forming a simple mm-wave power detection system. First RF measurement results of RECTENNA up to 110GHz are shown.