Analysis of latchup-induced photon emissions

Latchup-induced photon emission from CMOS devices is studied and compared with photon emission from hot carriers. Experiments revealed fundamental differences in spectral characteristics. By exploiting these differences, latchup sites are identified and depicted in high resolution. An effective method of separating photon emission patterns by passing through bandpass optical filters is described. It is shown that the photon emission mechanism from latchup is phonon-assisted electron-hole recombination.<
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