Inversion layer mobility under high normal field in nitrided-oxide MOSFETs

A comprehensive study on the inversion layer mobility improvement of n-channel MOSFETs with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented. The performance improvement is described from both the device physics modeling and device/circuit design points of view by using the various kinds of current drivability and mobility data over wide ranges of gate drive and E/sub eff/. The nitridation- and reoxidation-condition dependencies of the mobility values are extensively reported. A mechanism for improvement is discussed in conjunction with the observed results of Auger electron spectroscopy, capacitance-voltage measurements, hole mobility measurements of p-channel MOSFETs, and transmission electron microscopy. The (reoxidized) nitrided oxides were fabricated fully by rapid thermal processing instead of conventional quartz-tube furnace annealing, whose major drawback is a considerable redistribution of dopant impurities.<
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