Novel Hot-Carrier Degradation Mechanisms in the Lateral Insulated-Gate Bipolar Transistor on SOI Substrate

The different hot-carrier degradation mechanisms of the lateral insulated-gate bipolar transistor on a silicon-on-insulator substrate (SOI-LIGBT) for different stress conditions have been experimentally investigated for the first time. For low V
_gs
and high V
_ds
, the hot hole injects and traps into the accumulation and the field oxide, particularly the bird's beak, which results in the decrease in the on-resistance R
_on
at the early stress stage. It is interesting that the decrease level of R
_on
in SOI-LIGBT is much more serious than that in the SOI laterally diffused metal-oxide-semiconductor with the same structure fully except for the doping type in the drain area. In addition, the buried oxide surface under the drain area also suffers from severe hot-carrier degradation. However, for high V
_gs
and low V
_ds
, only hot-electron injection into the gate oxide near the source side can be observed; there is no hot-carrier degradation to be found in both the field and buried oxides.