Productivity improvement for a Zr-base high-k film deposition using thermal chamber cleaning technique

We have proposed that BCl
3
-2%O
2
gas mixture was useful for the high-k chamber cleaning because of sufficient etching rate of 30 nm/min. It was clarified that residuals such as B and Cl originating from the etching gas do not remain on the surface after etching, and that there was no damage to the SiO
2
(quartz) surface. When compared to wet cleaning downtime, this new dry cleaning method is able to drastically reduce it to 1/8.