Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)

The transport properties of a two-dimensional electron gas in Al/sub 0.3/Ga/sub 0.7/As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 mu m showed a transconductance as high as 340 mS/mm. The FETs also showed a broad plateau of transconductance around its peak, which is not typical in MODFETs.<
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