A 22–31 GHz Distributed Amplifier Based on High-Pass Transmission Lines Using 0.18 $\mu{\rm m}$ CMOS Technology

This letter demonstrates a 22-31 GHz CMOS distributed amplifier (DA) based on high-pass transmission lines. Unlike the low-pass DA, the circuit can be smaller since it does not need extra drain bias circuits. This DA has a maximum output power of 12 dBm, a maximum
OP
_1dB
of 6.5 dBm, and a small signal gain of 6.4 dB. The chip occupies a miniature area of 0.28 mm
²
including the pads and the core area is only 0.17 mm
²
.